Electrochemical anodizing techniques for structuring of high-performance vertical organic field-effect transistors

Erjuan Guo; Kyung-Geun Lim; Hans Kleemann; Karl Leo

doi:10.1117/12.2567309

20 August 2020 Electrochemical anodizing techniques for structuring of high-performance vertical organic field-effect transistors

Erjuan Guo, Kyung-Geun Lim, Hans Kleemann, Karl Leo

Author Affiliations +

Proceedings Volume 11476, Organic and Hybrid Field-Effect Transistors XIX; 1147612 (2020) https://doi.org/10.1117/12.2567309
Event: SPIE Organic Photonics + Electronics, 2020, Online Only

Conference Poster

Abstract

Vertical organic transistors are an attractive alternative for short channel transistors, in particular, vertical organic permeable base transistors can achieve record-high transition frequencies of up to 40 MHz and drive large current densities of kA cm-2. Here, we design a novel architecture for vertical organic field-effect transistors (VOFETs) with superior electrical performance and simplified low-cost processing. By using electrochemically oxidized aluminum oxide as the charge blocking layer in VOFETs, direct leakage current paths between source and drain can be effectively suppressed, enabling VOFETs with a high on-off ratio and exceptional transconductance. Our anodization technique is easy to be realized and can be readily used on both n-type and p-type organic semiconductor thin films to achieve high-performance VOFETs, opening a new pathway to build, e.g. complementary circuit composed of vertical organic transistors.

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Erjuan Guo, Kyung-Geun Lim, Hans Kleemann, and Karl Leo "Electrochemical anodizing techniques for structuring of high-performance vertical organic field-effect transistors", Proc. SPIE 11476, Organic and Hybrid Field-Effect Transistors XIX, 1147612 (20 August 2020); https://doi.org/10.1117/12.2567309

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