Structure and stability of Sc/Si multilayers with different thickness ratio for wavelength at 46.5 nm

Jiali Wu; Runze Qi; Zhanshan Wang; Qiushi Huang; Xianyong Bai

doi:10.1117/12.2567335

21 August 2020 Structure and stability of Sc/Si multilayers with different thickness ratio for wavelength at 46.5 nm

Jiali Wu, Runze Qi, Zhanshan Wang, Qiushi Huang, Xianyong Bai

Proceedings Volume 11491, Advances in X-Ray/EUV Optics and Components XV; 1149106 (2020) https://doi.org/10.1117/12.2567335
Event: SPIE Optical Engineering + Applications, 2020, Online Only

Abstract

Sc/Si multilayer has excellent reflectivity at the wavelength of 35-50 nm and is expected to be fabricated for application in the solar EUV telescope, reflecting Ne VII line (46.5 nm) at normal incidence angle. For obtaining the stable narrow bandwidth, Sc/Si multilayers with different Sc thickness ratios were designed. And the structure and temporal stability of fabricated multilayers were studied. Sc/Si multilayers with a period thickness of about 24 nm were deposited by DC magnetron sputtering. The GIXR measurements indicated that interface diffusion was existed between Sc and Si layers. As the thickness ratio of the Sc increased, the width on Sc-on-Si interfaces increased. The surface roughness of these samples were no obviously different under AFM tests. After two months, the periodic structure and thickness were found to be stable. With a Sc thickness ratio value of 0.67, Sc/Si multilayer not only have the narrow bandwidth, but also have a good temporal stability.

Conference Presentation

Citation Download Citation

Jiali Wu, Runze Qi, Zhanshan Wang, Qiushi Huang, and Xianyong Bai "Structure and stability of Sc/Si multilayers with different thickness ratio for wavelength at 46.5 nm", Proc. SPIE 11491, Advances in X-Ray/EUV Optics and Components XV, 1149106 (21 August 2020); https://doi.org/10.1117/12.2567335

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