Colloidal quantum dot-silicon photodetector based on TCAD simulation

Yuanlin Shi; Zhiming Wu; Jun Gou; Xiang Dong; Jun Wang; Yadong Jiang

doi:10.1117/12.2576295

5 November 2020 Colloidal quantum dot-silicon photodetector based on TCAD simulation

Yuanlin Shi, Zhiming Wu, Jun Gou, Xiang Dong, Jun Wang, Yadong Jiang

Author Affiliations +

Proceedings Volume 11567, AOPC 2020: Optical Sensing and Imaging Technology; 115670Z (2020) https://doi.org/10.1117/12.2576295
Event: Applied Optics and Photonics China (AOPC 2020), 2020, Beijing, China

Abstract

Lead sulfide colloidal quantum dots, similar to the nanoscale crystals of most semiconductor crystals, are available in a variety of sizes, shapes, and compositions as well as to make different chemical molecular ligands to modify the surface of the quantum dots and to fabricate functional optoelectronic devices on a variety of substrate materials. The combination of silicon and colloidal quantum dots enables the fabrication of silicon-based compatible quantum dot optoelectronic devices over a wide range of applications. In this paper, the effects of channel doping concentration and channel length on the performance of silicon-based CQD/Si photodetectors are calculated and analyzed from the simulation method. The results show that a suitable doping concentration and a short channel length can improve the performance of the device, which provides a simulation basis for the fabrication of silicon-based compatible arrayed colloidal quantum dot photodetectors.

Citation Download Citation

Yuanlin Shi, Zhiming Wu, Jun Gou, Xiang Dong, Jun Wang, and Yadong Jiang "Colloidal quantum dot-silicon photodetector based on TCAD simulation", Proc. SPIE 11567, AOPC 2020: Optical Sensing and Imaging Technology, 115670Z (5 November 2020); https://doi.org/10.1117/12.2576295

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