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17 November 2020 Free-carrier dynamics in p-doped silicon induced by an intense terahertz field
Oleg V. Chefonov, Andrey V. Ovchinnikov, Mikhail B. Agranat
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Proceedings Volume 11582, Fourth International Conference on Terahertz and Microwave Radiation: Generation, Detection, and Applications; 1158203 (2020) https://doi.org/10.1117/12.2575659
Event: Fourth International Conference on Terahertz and Microwave Radiation: Generation, Detection, and Applications, 2020, Tomsk, Russian Federation
Abstract
We present experimental results on measurement of free-carrier dynamics in p-type silicon crystal in high electric fields of THz pulses in the MV/cm range. Carrier recombination dynamics in p-type silicon is analyzed through time-resolved pump-probe experiments in which THz pulse is used as a pump, and a femtosecond optical pulse is used as a probe.
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Oleg V. Chefonov, Andrey V. Ovchinnikov, and Mikhail B. Agranat "Free-carrier dynamics in p-doped silicon induced by an intense terahertz field", Proc. SPIE 11582, Fourth International Conference on Terahertz and Microwave Radiation: Generation, Detection, and Applications, 1158203 (17 November 2020); https://doi.org/10.1117/12.2575659
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KEYWORDS
Terahertz radiation
Silicon
Crystals
Ionization
Femtosecond phenomena
Absorption
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