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5 March 2021 Temperature dependency of responsivity and dark current of nearly ideal black silicon photodiodes
Juha Heinonen, Antti Haarahiltunen, Michael Serue, Daria Kriukova, Ville Vähänissi, Toni P. Pasanen, Hele Savin, Mikko A. Juntunen
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Proceedings Volume 11682, Optical Components and Materials XVIII; 1168207 (2021) https://doi.org/10.1117/12.2577128
Event: SPIE OPTO, 2021, Online Only
Abstract
A high-quality photodiode has high signal-to-noise ratio (SNR), which is ultimately defined by the responsivity and dark current of the photodiode. Black silicon induced junction photodiodes have been shown to have nearly ideal responsivity across a wide range of wavelengths between 175-1100 nm at room temperature (RT). Here we present their spectral responsivity stability and dark current at different temperatures. Both quantities show temperature dependencies similar to conventional pn-junction photodiodes, proving that black silicon photodiodes maintain their improved SNR also at temperatures other than RT.
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Juha Heinonen, Antti Haarahiltunen, Michael Serue, Daria Kriukova, Ville Vähänissi, Toni P. Pasanen, Hele Savin, and Mikko A. Juntunen "Temperature dependency of responsivity and dark current of nearly ideal black silicon photodiodes", Proc. SPIE 11682, Optical Components and Materials XVIII, 1168207 (5 March 2021); https://doi.org/10.1117/12.2577128
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KEYWORDS
Photodiodes
Signal to noise ratio
Silicon
Temperature metrology
Internal quantum efficiency
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