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5 March 2021 Developments of GaN-based VCSELs with epitaxially grown DBRs
Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, Isamu Akasaki
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Proceedings Volume 11686, Gallium Nitride Materials and Devices XVI; 116860G (2021) https://doi.org/10.1117/12.2576494
Event: SPIE OPTO, 2021, Online Only
Abstract
We will show our two recent results related to GaN-based VCSELs with AlInN/GaN DBRs. One is in-situ wafer curvature control of AlInN/GaN DBRs. Curvature data successfully provides us the strain condition in the AlInN layers, which leads to a high reproducibility for fabricating the AlInN/GaN DBRs. The other is laser operation of the VCSELs with large current apertures. While our previous VCSELs with only 8-15 µm apertures showed RT CW operations, our recent VCSELs now show RT CW operations with 5-30 µm apertures. such larger apertures will eventually provide much higher LOPs in the future.
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Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, and Isamu Akasaki "Developments of GaN-based VCSELs with epitaxially grown DBRs", Proc. SPIE 11686, Gallium Nitride Materials and Devices XVI, 116860G (5 March 2021); https://doi.org/10.1117/12.2576494
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KEYWORDS
Vertical cavity surface emitting lasers
Semiconducting wafers
Continuous wave operation
Data modeling
Aluminum
Gallium nitride
Indium nitride
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