Materials progress for the development of beta-Ga2O3 for power electronics

James S. Speck

doi:10.1117/12.2591435

5 March 2021 Materials progress for the development of β-Ga₂O₃ for power electronics

James S. Speck

Proceedings Volume 11687, Oxide-based Materials and Devices XII; 116870P (2021) https://doi.org/10.1117/12.2591435
Event: SPIE OPTO, 2021, Online Only

Abstract

In the past year and a half, major progress has been realized in beta-Ga2O3 as a power electronic material. In comparison with other wide and ultrawide bandgap (WBG and UWBG) semiconductors, bulk beta-Ga2O3 can be grown directly from the melt. The material offers controlled donor doping with Si, Ge, or Sn, remarkably low background unintentional compensating acceptor concentration, intentional compensation doping with Mg, Fe, or N. The material offers controlled wet etching. Recent thermal calculations show that despite the modest thermal conductivity (~1/2 of GaAs), heat can be managed in canonical lateral and vertical devices designs. For vertical devices, taking into account dopant ionization energies, a revised figure of merit for minimum on-resistance shows the superior performance potential for beta-Ga2O3 compared to all WBG and UWBG semiconductors.

Conference Presentation

Citation Download Citation

James S. Speck "Materials progress for the development of β-Ga₂O₃ for power electronics", Proc. SPIE 11687, Oxide-based Materials and Devices XII, 116870P (5 March 2021); https://doi.org/10.1117/12.2591435

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