Ge-on-Si based mid-infrared plasmonics

Jacopo Frigerio; Leonetta Baldassarre; Giovanni Pellegrini; Marco P. Fischer; Kevin Gallacher; Ross Millar; Andrea Ballabio; Daniele Brida; Giovanni Isella; Enrico Napolitani; Douglas J. Paul; Michele Ortolani; Paolo Biagioni

doi:10.1117/12.2576175

5 March 2021 Ge-on-Si based mid-infrared plasmonics

Jacopo Frigerio, Leonetta Baldassarre, Giovanni Pellegrini, Marco P. Fischer, Kevin Gallacher, Ross Millar, Andrea Ballabio, Daniele Brida, Giovanni Isella, Enrico Napolitani, Douglas J. Paul, Michele Ortolani, Paolo Biagioni

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Proceedings Volume 11691, Silicon Photonics XVI; 116910M (2021) https://doi.org/10.1117/12.2576175
Event: SPIE OPTO, 2021, Online Only

Abstract

In the last decade, silicon photonics has undergone an impressive development driven by an increasing number of technological applications. Plasmonics has not yet made its way to the microelectronic industry, mostly because of the lack of compatibility of typical plasmonic materials with foundry processes. In this framework, we have developed a plasmonic platform based on heavily n-doped Ge grown on silicon substrates. We developed growth protocols to reach n-doping levels exceeding 10²⁰ cm^-3, allowing us to tune the plasma wavelength of Ge in the 3-15 μm range. The plasmonic resonances of Ge-on-Si nanoantennas have been predicted by simulations, confirmed by experimental spectra and exploited for molecular sensing. Our work represents a benchmark for group-IV mid-IR plasmonics.

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Jacopo Frigerio, Leonetta Baldassarre, Giovanni Pellegrini, Marco P. Fischer, Kevin Gallacher, Ross Millar, Andrea Ballabio, Daniele Brida, Giovanni Isella, Enrico Napolitani, Douglas J. Paul, Michele Ortolani, and Paolo Biagioni "Ge-on-Si based mid-infrared plasmonics", Proc. SPIE 11691, Silicon Photonics XVI, 116910M (5 March 2021); https://doi.org/10.1117/12.2576175

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