High performance 940nm VCSELs on large area germanium substrates: the ideal substrate for volume manufacture

Andrew Johnson; Andrew Joel; Andrew Clark; Dan Pearce; Matthew Geen; Wang Wang; Rodney Pelzel; Sung Wook Lim

doi:10.1117/12.2583207

5 March 2021 High performance 940nm VCSELs on large area germanium substrates: the ideal substrate for volume manufacture

Andrew Johnson, Andrew Joel, Andrew Clark, Dan Pearce, Matthew Geen, Wang Wang, Rodney Pelzel, Sung Wook Lim

Author Affiliations +

Proceedings Volume 11704, Vertical-Cavity Surface-Emitting Lasers XXV; 1170404 (2021) https://doi.org/10.1117/12.2583207
Event: SPIE OPTO, 2021, Online Only

Abstract

Wafer bow/warp in high performance 940nm VCSEL epitaxial wafers has been eliminated through the use of 150 mm Ge substrates, replacing conventional GaAs substrates. Ge is a drop-in replacement for GaAs for this application and has additional benefits in that it is zero EPD and mechanically more robust. High performance 940nm VCSELs have been fabricated on Ge and compared directly with those grown on GaAs with the same structure, with no discernible difference in device performance between the two approaches. Use of Ge also provides an immediate route to 200 mm VCSEL growths as Ge is readily available at that diameter.

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Citation Download Citation

Andrew Johnson, Andrew Joel, Andrew Clark, Dan Pearce, Matthew Geen, Wang Wang, Rodney Pelzel, and Sung Wook Lim "High performance 940nm VCSELs on large area germanium substrates: the ideal substrate for volume manufacture", Proc. SPIE 11704, Vertical-Cavity Surface-Emitting Lasers XXV, 1170404 (5 March 2021); https://doi.org/10.1117/12.2583207

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