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5 March 2021 InAlGaN-based ridge-guide laser diodes using remote plasma chemical vapour deposition for enhanced performance
Josh D. Brown, Satya Barik, Qian Gao, Brad Siskavich, Marie Wintrebert-Fouquet, Alanna Fernandes, Patrick Chen, Brad Zadrozny, Oliver Pitman, Bin Zhang, Ian Mann
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Proceedings Volume 11705, Novel In-Plane Semiconductor Lasers XX; 117050D (2021) https://doi.org/10.1117/12.2584047
Event: SPIE OPTO, 2021, Online Only
Abstract
InAlGaN-based laser diodes (LDs) can be designed to emit across a wide range of wavelengths spanning UV to green. A common challenge across all wavelengths lies in the difficulty in producing low resistance p-type InAlGaN layers. For shorter wavelength devices, the requirement of high aluminium containing p-AlGaN leads to high device series resistance. For the longer wavelength devices approaching the green wavelengths, the thermal degradation of the indium-rich quantum wells during the growth of the p-GaN and p-AlGaN cladding layers reduces the device efficiency. In this paper we discuss how BluGlass’s remote plasma chemical vapour deposition (RPCVD) technology can address these challenges through improvements to intrinsic material properties as well as enabling novel design architectures.
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Josh D. Brown, Satya Barik, Qian Gao, Brad Siskavich, Marie Wintrebert-Fouquet, Alanna Fernandes, Patrick Chen, Brad Zadrozny, Oliver Pitman, Bin Zhang, and Ian Mann "InAlGaN-based ridge-guide laser diodes using remote plasma chemical vapour deposition for enhanced performance", Proc. SPIE 11705, Novel In-Plane Semiconductor Lasers XX, 117050D (5 March 2021); https://doi.org/10.1117/12.2584047
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KEYWORDS
Chemical vapor deposition
Plasma
Semiconductor lasers
Resistance
Metals
Optical storage
Quantum efficiency
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