Presentation
5 March 2021 Dilute-As InGaNAs quantum wells for red-emitting laser active regions
Hanlin Fu, Wei Sun, Justin C. Goodrich, Damir Borovac, Nelson Tansu
Author Affiliations +
Abstract
The material gain and threshold current density properties of dilute-As InGaNAs-based quantum wells (QWs) are analyzed via a self-consistent 6-band k·p formulism. Amber emission is achieved by the implementation of dilute-As InGaNAs with low In-content. Significant threshold current density reduction and enhanced material gain are obtained by the employment of an In0.19Ga0.81N0.97As0.03 (Eg ~ 2.1 eV) alloy into the active region for red-emitting lasers, compared to a conventional high In-content InGaN-based QW emitting at the same wavelength (λ~600 nm). Our study reveals the excellent potential of the dilute-As InGaNAs for implementation as the active region for red-emitting lasers.
Conference Presentation
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hanlin Fu, Wei Sun, Justin C. Goodrich, Damir Borovac, and Nelson Tansu "Dilute-As InGaNAs quantum wells for red-emitting laser active regions", Proc. SPIE 11705, Novel In-Plane Semiconductor Lasers XX, 117050F (5 March 2021); https://doi.org/10.1117/12.2578751
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KEYWORDS
Quantum wells

Arsenic

Chemical species

Gallium nitride

Indium gallium nitride

Laser damage threshold

Crystals

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