Mass production of AlN substrates by high speed homoepitaxial growth

Yoshinao Kumagai; Nao Takekawa; Ken Goto; Toru Nagashima; Reo Yamamoto; Junji Kotani

doi:10.1117/12.2577987

5 March 2021 Mass production of AlN substrates by high speed homoepitaxial growth

Yoshinao Kumagai, Nao Takekawa, Ken Goto, Toru Nagashima, Reo Yamamoto, Junji Kotani

Proceedings Volume 11706, Light-Emitting Devices, Materials, and Applications XXV; 117060M (2021) https://doi.org/10.1117/12.2577987
Event: SPIE OPTO, 2021, Online Only

Abstract

The development of high-power and reliable deep-UV optical devices requires low dislocation density AlN substrates. In this study, thick AlN layers were homoepitaxially grown on PVT-AlN(0001) substrates by HVPE method at a growth rate above 100 μm/h. The grown layer showed low dislocation densities of less than 1E4 cm^-2 and a high deep-UV optical transparency. Recent expansions in both diameter of the substrate and size of the growth reactor have enabled mass-production of 2-inch-diameter HVPE-AlN substrates for deep-UV optical devices. This work was partially supported by Innovative Science and Technology Initiative for Security Grant Number JPJ004596, ATLA, Japan.

Conference Presentation

Citation Download Citation

Yoshinao Kumagai, Nao Takekawa, Ken Goto, Toru Nagashima, Reo Yamamoto, and Junji Kotani "Mass production of AlN substrates by high speed homoepitaxial growth", Proc. SPIE 11706, Light-Emitting Devices, Materials, and Applications XXV, 117060M (5 March 2021); https://doi.org/10.1117/12.2577987

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