High-concentration doping of donor and acceptor in fluorescent 4H-SiC by closed sublimation growth

Yoma Yamane; Weifang Lu; Kosuke Yanai; Satoshi Kamiyama; Tetsuya Takeuchi; Motoaki Iwaya; Isamu Akasaki

doi:10.1117/12.2577458

5 March 2021 High-concentration doping of donor and acceptor in fluorescent 4H-SiC by closed sublimation growth

Yoma Yamane, Weifang Lu, Kosuke Yanai, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya, Isamu Akasaki

Proceedings Volume 11706, Light-Emitting Devices, Materials, and Applications XXV; 117060W (2021) https://doi.org/10.1117/12.2577458
Event: SPIE OPTO, 2021, Online Only

Abstract

As a potential material for white light source, high luminous efficiency of fluorescent SiC requires a concentration of higher than 1.0×10¹⁹ cm^-3for both the donor (Nd) and acceptor (Na) and a film thickness of about 120 μm. In this study, we focus on the epitaxial growth of fluorescent 4H-SiC by closed sublimation growth in terms of different growth temperatures to increase the doping concentration of boron and nitrogen. In addition, the effect of growth pressure on the surface morphology was investigated. The photoluminescence (PL) intensity of the sample grown at 1900 °C is higher than that grown at 1800 °C. This result indicates that a higher temperature of 1900 °C can increase the boron (B) and nitrogen (N) doping concentration. However, it was confirmed that the surface of the sample grown at 1900 °C was rough. The surface morphology was significantly improved with an increased pressure to 9000 Pa. Meanwhile, the growth time was extended to increase the film thickness, and the amount of BN, which is the doping source of B acceptor, was increased accordingly. As a result, strong PL emission intensity with high internal quantum efficiency (IQE) was successfully demonstrated in 4H-SiC sample, which is comparable to that in fluorescent 6H-SiC.

Conference Presentation

Citation Download Citation

Yoma Yamane, Weifang Lu, Kosuke Yanai, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya, and Isamu Akasaki "High-concentration doping of donor and acceptor in fluorescent 4H-SiC by closed sublimation growth", Proc. SPIE 11706, Light-Emitting Devices, Materials, and Applications XXV, 117060W (5 March 2021); https://doi.org/10.1117/12.2577458

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available