Enhanced penetration depth of surface passivation in porous fluorescent 6H-SiC with Si/C-faces

Kosuke Yanai; Weifang Lu; Yoma Yamane; Satoshi Kamiyama; Tetuya Takeuchi; Motoaki Iwaya; Isamu Akasaki

doi:10.1117/12.2577428

5 March 2021 Enhanced penetration depth of surface passivation in porous fluorescent 6H-SiC with Si/C-faces

Kosuke Yanai, Weifang Lu, Yoma Yamane, Satoshi Kamiyama, Tetuya Takeuchi, Motoaki Iwaya, Isamu Akasaki

Proceedings Volume 11706, Light-Emitting Devices, Materials, and Applications XXV; 117060X (2021) https://doi.org/10.1117/12.2577428
Event: SPIE OPTO, 2021, Online Only

Abstract

We report on the fabrication, structure and characteristic of porous fluorescent SiC using voltage-controlled anodic oxidation method. In this experiment, the fluorescent SiC substrates were immersed in hydrofluoric acid for anodic oxidation etching. The porous structures changed significantly as the voltage increased to 10 V, 20 V and 30 V. Under a high voltage, it is considered that a large amount of electrons were injected into the fluorescent SiC and increased the anodic reaction rate. In the photoluminescence (PL) spectra, a emission peak in the short wavelength region was observed. And these emission intensities increase as the voltage increase.

Conference Presentation

Citation Download Citation

Kosuke Yanai, Weifang Lu, Yoma Yamane, Satoshi Kamiyama, Tetuya Takeuchi, Motoaki Iwaya, and Isamu Akasaki "Enhanced penetration depth of surface passivation in porous fluorescent 6H-SiC with Si/C-faces", Proc. SPIE 11706, Light-Emitting Devices, Materials, and Applications XXV, 117060X (5 March 2021); https://doi.org/10.1117/12.2577428

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
PRESENTATION

WATCH
PRESENTATION SAVE TO MY LIBRARY

GET CITATION

KEYWORDS

Silicon carbide

Oxidation

Light emitting diodes

Luminescence

Boron

Nitrogen

Scanning electron microscopy

RELATED CONTENT

Effects of oxygenation on PDT efficacy as a function of reactive...
Proceedings of SPIE (February 22 2013)

Formation and characterization of porous SiC by anodic oxidation using...
Proceedings of SPIE (January 02 2018)

Efficient optical sources in silicon using dislocation engineering
Proceedings of SPIE (November 11 2002)

Fluorescent SiC with pseudo-periodic moth-eye structures
Proceedings of SPIE (October 15 2012)

Silicon carbide white light LEDs for solid-state lighting
Proceedings of SPIE (February 13 2007)

Synthesis and characterization of mixed oligoheterocycles based on end capped...
Proceedings of SPIE (December 16 1998)

Novel polymers based on poly(fluorene)s for LED applications
Proceedings of SPIE (May 18 1999)

Subscribe to Digital Library

Receive Erratum Email Alert

Keywords/Phrases

Search In:

Publication Years