Presentation + Paper
12 April 2021 High operating temperature n-on-p extrinsic MWIR HgCdTe photodiodes
M. Soria, P. Bleuet, F. Boulard, J.-L. Santailler, F. Marmonier, L. Bonnefond, T. Pellerin, G. Poisson, J. Rothman
Author Affiliations +
Abstract
N-on-p extrinsically doped MWIR HgCdTe material and photodiodes have been developed to benefit from the expected reduction of the Auger generation in the p-type absorbing layer. Samples with two doping levels have been characterized using dark current, current noise, Hall effect and PhotoLuminescence Decay (PLD) measurements. The dark current and PLD measurements are consistent with a reduction of the Auger generation quantified by the ratio between the Auger 1 and 7 recombination coefficients š¯›¾ around 10. The corresponding dark current in the sample with the lowest doping level was slightly higher than in typically p-on-n photodiodes. The low frequency noise, characterized by a Tobin coefficient below 10-5, is lower than the values reported for other MWIR HgCdTe photodiodes at the same dark current density. The low dark current and dark current noise show on the high potential of such photodiodes to form focal plane array that can be operated at high operating temperature without degradation of the image quality.
Conference Presentation
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Soria, P. Bleuet, F. Boulard, J.-L. Santailler, F. Marmonier, L. Bonnefond, T. Pellerin, G. Poisson, and J. Rothman "High operating temperature n-on-p extrinsic MWIR HgCdTe photodiodes", Proc. SPIE 11741, Infrared Technology and Applications XLVII, 117411C (12 April 2021); https://doi.org/10.1117/12.2587706
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KEYWORDS
Mercury cadmium telluride

Photodiodes

Mid-IR

Doping

Diffusion

Semiconducting wafers

Imaging systems

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