Graphene nanoribbon photogating for graphene-based infrared photodetectors

Shinpei Ogawa; Shoichiro Fukushima; Satoshi Okuda; Masaaki Shimatani

doi:10.1117/12.2585287

12 April 2021 Graphene nanoribbon photogating for graphene-based infrared photodetectors

Shinpei Ogawa, Shoichiro Fukushima, Satoshi Okuda, Masaaki Shimatani

Proceedings Volume 11741, Infrared Technology and Applications XLVII; 117411H (2021) https://doi.org/10.1117/12.2585287
Event: SPIE Defense + Commercial Sensing, 2021, Online Only

Abstract

Graphene—atomically thin carbon sheets with a two-dimensional hexagonal lattice structure—exhibits unusual electronic and optical properties. Photodetectors are a good prospective application of graphene because they should ideally exhibit a broadband photoresponse from the ultraviolet to terahertz regions and high-speed operation, as well as be inexpensive to produce. Numerous methods have been proposed in order to enhance the responsivity of graphene-based photodetectors. Among these methods, photogating is most promising because it can realize the highest performance. Photogating requires photosensitive layers at the vicinity of graphene in order to produce a voltage change. Various photosensitive layers, including quantum dots, Si, InSb, and LiNbO₃, are used in the visible to near-, mid-, and long-wavelength IR (NIR, MWIR, and LWIR) regions, respectively. However, the operating wavelength region is determined by the photosensitive layer, which undermines the advantage of broadband operation of the graphene. In this work, graphene nanoribbon (GNR) was used as a photosensitive layer. Graphene transistors were prepared using Si substrates with a SiO₂ layer and source and drain electrodes. Single-layer graphene fabricated by chemical vapor deposition was transferred onto this substrate and formed a channel, and GNR was formed on the graphene channel using a solution dispersion method. The photoresponse was measured in the mid- and long-wavelength infrared regions. The photoresponse was found to be enhanced by GNR photogating compared with the photoresponse of devices without GNR. These results are expected to contribute to the development of high-performance broadband IR photodetectors.

Conference Presentation

Citation Download Citation

Shinpei Ogawa, Shoichiro Fukushima, Satoshi Okuda, and Masaaki Shimatani "Graphene nanoribbon photogating for graphene-based infrared photodetectors", Proc. SPIE 11741, Infrared Technology and Applications XLVII, 117411H (12 April 2021); https://doi.org/10.1117/12.2585287

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available