Poster
3 August 2021 Enhanced lead sulfide quantum dots infrared photodetector performance through ligand exchange
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Conference Poster
Abstract
Narrow bandgap lead sulfide (PbS) quantum dots (QDs) are solution-processed materials used for optoelectronic applications in the short-wavelength infrared (SWIR) range (1400 - 3000 nm). The PbS QDs based photodetector has achieved comparable detectivity with current commercial SWIR sensors. However, there are still obstacles towards commercialization in commonly used layer by layer (LbL) deposition, such as high material consumption and low reproducibility. Here, we developed a new ligand exchange strategy to prepare ligand exchanged QD inks for single-step PbS film deposition. Compared with LbL deposition, the EQE of PbS QD photodetector made by single-step deposition has improved from 31% to 53%. The EQE and responsivity can be further improved to 95% with IR transparent electrode.
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shichen Yin, Franky So, Shuo Ding, Liping Zhu, Qi Dong, and Carr Hoi Yi Ho "Enhanced lead sulfide quantum dots infrared photodetector performance through ligand exchange", Proc. SPIE 11810, Organic and Hybrid Sensors and Bioelectronics XIV, 118100U (3 August 2021); https://doi.org/10.1117/12.2603399
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KEYWORDS
Lead

Infrared radiation

Photodetectors

Quantum dots

Infrared photography

Quantum well infrared photodetectors

External quantum efficiency

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