Photoreflectance Study Of Strain At Si/SiO2 Interfaces Prepared By Thermal Oxidation Of Silicon

X. Yin; Fred H. Pollak; J. T. Fitch; C. H. Bjorkman; G. Lucovsky

doi:10.1117/12.963923

5 February 1990 Photoreflectance Study Of Strain At Si/SiO₂ Interfaces Prepared By Thermal Oxidation Of Silicon

X. Yin, Fred H. Pollak, J. T. Fitch, C. H. Bjorkman, G. Lucovsky

Proceedings Volume 1186, Surface and Interface Analysis of Microelectronic Materials Processing and Growth; (1990) https://doi.org/10.1117/12.963923
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States

Abstract

We have used the contactless electromodulation technique of photoreflectance (PR) to investigate the strain in the near surface region (-100 R) of Si in thermally prepared (~100Å) Si/Si02 interfaces. We have tracked the position of the E1 optical feature (Λ3 - Λl transitions) relative to its position in a reference Si wafer (not intentionally oxided). From the observed red-shifts we can deduce both the magnitude and sign (tensile) of the strain. These observations are consistent with the compressive stress in the SiO, at the Si/Si02 interface as evaluated previously using it transmission, ellipsometry and laser-beam deflection studies.

Citation Download Citation

X. Yin, Fred H. Pollak, J. T. Fitch, C. H. Bjorkman, and G. Lucovsky "Photoreflectance Study Of Strain At Si/SiO₂ Interfaces Prepared By Thermal Oxidation Of Silicon", Proc. SPIE 1186, Surface and Interface Analysis of Microelectronic Materials Processing and Growth, (5 February 1990); https://doi.org/10.1117/12.963923

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