(Rubidium,Barium) Bismuth Oxide: A Model Material For Molecular Beam Epitaxy Of Perovskites

E. S. Hellman; E. H. Hartford

doi:10.1117/12.965145

19 March 1990 (Rubidium,Barium) Bismuth Oxide: A Model Material For Molecular Beam Epitaxy Of Perovskites

E. S. Hellman, E. H. Hartford

Proceedings Volume 1187, Processing of Films for High Tc Superconducting Electronics; (1990) https://doi.org/10.1117/12.965145
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States

Abstract

(Rb,Ba)Bi03 is a model material for the application of molecular beam epitaxy (MBE) to the growth of the superconducting perovskites. Synthesis of the superconducting phase can be accomplished in situ at temperatures between 300°C and 400°C, which has allowed the growth of superconducting films on silicon substrates. Measurements of the sticking coefficients for various growth conditions have shown that in a narrow region of flux compositions, adsorption and desorption rates of bismuth and rubidium (and possibly barium) will control the stoichiometry of the film. The epitaxy proceeds in the normal (1 0 0) orientation on [1 0 0) SrTiO3, despite a 10% lattice mismatch. On (10 0) MgO substrates, (1 1 0) epitaxy is obtained at lower substrate temperatures, while lattice matched (10 0) epitaxy occurs at higher substrate temperatures.

Citation Download Citation

E. S. Hellman and E. H. Hartford "(Rubidium,Barium) Bismuth Oxide: A Model Material For Molecular Beam Epitaxy Of Perovskites", Proc. SPIE 1187, Processing of Films for High Tc Superconducting Electronics, (19 March 1990); https://doi.org/10.1117/12.965145

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