Effects Of HCl Gas And Hydrogen Mixture Etching On In Situ Cleaning Of GaAs Substrates In Molecular Beam Epitaxy

Junji Saito; Kazuo Kondo

doi:10.1117/12.963945

15 February 1990 Effects Of HCl Gas And Hydrogen Mixture Etching On In Situ Cleaning Of GaAs Substrates In Molecular Beam Epitaxy

Junji Saito, Kazuo Kondo

Author Affiliations +

Proceedings Volume 1188, Multichamber and In-Situ Processing of Electronic Materials; (1990) https://doi.org/10.1117/12.963945
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States

Abstract

We have investigated in situ cleaning of GaAs substrates with a HCl gas and hydrogen mixture prior to molecular beam epitaxy in a multichamber system. The chemical reaction during etching was monitored in situ and simultaneously using a quadrupole mass spectrometer. After etching, the reflection high energy electron diffraction patterns with reconstructed structures, such as (2x4) As-stabilized surface and (4x2) Ga-stabilized surface, were observed in the gas etched substrate surface. These structures suggest that the gas etched substrate surface is atomically flat, resembling an epitaxial layer surface. To study the effect of gas etching, the carrier depletion layer and the residual carbon impurity around the substrate epitaxial interface were measured by capacitance-voltage carrier profiling and secondary ion mass spectroscopy. After gas etching, the carrier depletion was greatly reduced, from 1.2 x 1012 to 1 x 101° cm-2. The carbon impurity around the interface also decreased by one order of magnitude. We then applied this etching technique to in situ cleaning of semi-insulating GaAs substrates prior to the growth of selectively doped GaAs/N-AlGaAs heterostructures having very thin GaAs buffer layers.

Citation Download Citation

Junji Saito and Kazuo Kondo "Effects Of HCl Gas And Hydrogen Mixture Etching On In Situ Cleaning Of GaAs Substrates In Molecular Beam Epitaxy", Proc. SPIE 1188, Multichamber and In-Situ Processing of Electronic Materials, (15 February 1990); https://doi.org/10.1117/12.963945

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available