Novel technology of III-V die-bonded SOI photonic integrated circuits

Delphine Néel; Alexandre Shen; Pierre Fanneau de La Horie; Nicolas Vaissière; Arnaud Wilk; Viviane Muffato; Stéphane Malhouitre; Valentin Ramez; Yohan Desières; Karim Hassan

doi:10.1117/12.2603190

6 October 2021 Novel technology of III-V die-bonded SOI photonic integrated circuits

Delphine Néel, Alexandre Shen, Pierre Fanneau de La Horie, Nicolas Vaissière, Arnaud Wilk, Viviane Muffato, Stéphane Malhouitre, Valentin Ramez, Yohan Desières, Karim Hassan

Author Affiliations +

Proceedings Volume 11880, Emerging Applications in Silicon Photonics II; 118800M (2021) https://doi.org/10.1117/12.2603190
Event: SPIE Photonex, 2021, Glasgow, United Kingdom

Abstract

In the frame of the H2020 PICTURE project, we designed and developed densely integrated photonic devices and transceiver (TRx) circuits for high bit-rate telecom and datacom applications. We implemented a process with four different InP-based dies bonded on SOI wafers. With one sole back-end processing run, we achieved the fabrication of multiple components of the complex TRx circuits, and many building block devices, such as III-V/Si SOAs & Fabry-Perot lasers, photodiodes or fast tunable capacitive DFB lasers. First testing of these devices shows promising results. 13dBm-saturation power SOAs and less than 2ns-tuning time capacitive DFB lasers were fabricated and demonstrated.

Conference Presentation

Citation Download Citation

Delphine Néel, Alexandre Shen, Pierre Fanneau de La Horie, Nicolas Vaissière, Arnaud Wilk, Viviane Muffato, Stéphane Malhouitre, Valentin Ramez, Yohan Desières, and Karim Hassan "Novel technology of III-V die-bonded SOI photonic integrated circuits", Proc. SPIE 11880, Emerging Applications in Silicon Photonics II, 118800M (6 October 2021); https://doi.org/10.1117/12.2603190

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