High injection current density via Al-graded undoped-AlGaN cladding layer and Al-graded p-AlGaN hole source layer in AlGaN UVB LDs

Muhammad Ajml Khan; Noritoshi Maeda; Yuri Itokazu; Masafumi Jo; Hideki Hirayama

doi:10.1117/12.2603964

10 October 2021 High injection current density via Al-graded undoped-AlGaN cladding layer and Al-graded p-AlGaN hole source layer in AlGaN UVB LDs

Muhammad Ajml Khan, Noritoshi Maeda, Yuri Itokazu, Masafumi Jo, Hideki Hirayama

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Proceedings Volume 11891, Semiconductor Lasers and Applications XI; 118910E (2021) https://doi.org/10.1117/12.2603964
Event: SPIE/COS Photonics Asia, 2021, Nantong, JS, China

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Muhammad Ajml Khan, Noritoshi Maeda, Yuri Itokazu, Masafumi Jo, and Hideki Hirayama "High injection current density via Al-graded undoped-AlGaN cladding layer and Al-graded p-AlGaN hole source layer in AlGaN UVB LDs", Proc. SPIE 11891, Semiconductor Lasers and Applications XI, 118910E (10 October 2021); https://doi.org/10.1117/12.2603964

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