Room-temperature-bonded multiple GaAs plates for mid-IR wavelength conversion

Ichiro Shoji

doi:10.1117/12.2612479

4 March 2022 Room-temperature-bonded multiple GaAs plates for mid-IR wavelength conversion

Ichiro Shoji

Proceedings Volume 11985, Nonlinear Frequency Generation and Conversion: Materials and Devices XXI; 119850B (2022) https://doi.org/10.1117/12.2612479
Event: SPIE LASE, 2022, San Francisco, California, United States

Abstract

We recently fabricated a large-aperture quasi-phase matching stack of 53 GaAs plates using the room-temperature bonding. Although 29 times higher second-harmonic power was obtained than from a 9-plate stacked device, its surface profile was degraded and the positions with high transmittance were limited. By putting the GaAs plates on YAG crystals polished to laser grade instead of directly putting on metallic stages, we confirmed that the surface flatness as well as the transmittance were improved. We are now developing additional processes, which we expect realizes 100-plate or more stacked QPM structures with low loss.

Conference Presentation

Citation Download Citation

Ichiro Shoji "Room-temperature-bonded multiple GaAs plates for mid-IR wavelength conversion", Proc. SPIE 11985, Nonlinear Frequency Generation and Conversion: Materials and Devices XXI, 119850B (4 March 2022); https://doi.org/10.1117/12.2612479

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