Poster + Paper
4 March 2022 Towards ultimate limit InP nanowire solar cells
Author Affiliations +
Conference Poster
Abstract
Our previously reported 17.8 % efficiency InP nanowire solar cell1 showed a short-circuit current 𝐼𝑠𝑐 of 29.3 𝑚𝐴 𝑐𝑚2, which is not far from the theoretical maximum 𝐼𝑠𝑐 = 34.6 𝑚𝐴 𝑐𝑚2, but the loss in the open circuit voltage with respect to the radiative limit still amounted to 272 mV. To avoid this loss and reach the radiative limit we have to increase both the internal radiative efficiency 𝜂int PL and the photon escape probability 𝑃𝑒𝑠𝑐 towards unity, as shown by the last term in Eq. 1. 𝑉OC = 𝑉oc Ultimate − 𝑘B𝑇 𝑞 |𝑙𝑛 𝜀in 𝜀out |− 𝑘B𝑇 𝑞 |𝑙𝑛(𝜂int PL𝑃𝑒𝑠𝑐)| (1) We report top-down etched InP nanowires intended to both optimize the amount of light outcoupling as well as the directionality of the emitted light. The photon entropy loss is governed by the 𝑙𝑛 𝜀in 𝜀out term, which is responsible for a 300 mV loss in the open circuit voltage. To circumvent this loss, we need to redirect all the emitted photoluminescence from the cell back to the sun (ε𝑖𝑛 = ε𝑜𝑢𝑡), For this purpose, we have fabricated PMMA microlenses by using a reflow process, which can be precisely positioned with respect to the InP nanowires.
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
E. A. Bochicchio, I. Kolpakov, K. Korzun, P. A. L. M. Koolen, B. van Gorkom, W. J. H. Berghuis, R. Veldhoven, and J. E. M. Haverkort "Towards ultimate limit InP nanowire solar cells", Proc. SPIE 11996, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices XI, 119960D (4 March 2022); https://doi.org/10.1117/12.2608084
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KEYWORDS
Nanowires

Solar cells

Lenses

Microlens

Polymethylmethacrylate

Electron beam lithography

Photomasks

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