Presentation + Paper
2 March 2022 A new method for short pulse generation below 100 ps by controlling transverse mode distribution with free carrier plasma effect in an oxide-confined VCSEL
Naoto Jikutani, Kazuhiro Harasaka
Author Affiliations +
Abstract
In this paper, a new method for short pulse generation below 100 ps is reported by controlling the scale of transverse mode distribution by free carrier plasma effect in an oxide-confined VCSEL. A thin tapered oxide layer is the significant structure for controlling transverse mode. That structure provides small built-in transverse optical confinement, which enables changing the transverse mode distribution even with a slight change in the refractive index caused by carrier plasma effect. When a current is injected into the VCSEL, the refractive index around the oxide aperture decreases due to increase in the carrier density, and the transverse mode distribution spreads from center of the current injection region. This reduces the stimulated emission rate and suppresses lasing, and carriers accumulate in QWs. When the current pulse falls, the transverse mode distribution is narrowed as the refractive index increasing, and large stimulated emission rate achieved by accumulated carriers. Thus, Q-switch like single pulse lasing without tailing can be obtained with a conventional VCSEL structure. In a 940 nm top-emitting VCSEL having a thin oxide layer with the oxide aperture area of 29 μm2 , the pulse width of 53 ps and the peak power of 50 mW were observed in synchronization with falling of several nanosecond current pulse at room temperature.
Conference Presentation
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Naoto Jikutani and Kazuhiro Harasaka "A new method for short pulse generation below 100 ps by controlling transverse mode distribution with free carrier plasma effect in an oxide-confined VCSEL", Proc. SPIE 12020, Vertical-Cavity Surface-Emitting Lasers XXVI, 1202004 (2 March 2022); https://doi.org/10.1117/12.2607989
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KEYWORDS
Vertical cavity surface emitting lasers

Oxides

Picosecond phenomena

Refractive index

Plasma

Oxidation

Q switching

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