Presentation + Paper
3 March 2022 Ion implantation as a new strategy for micro-LED pixelation
Author Affiliations +
Abstract
InGaN-based blue light-emitting diodes (LEDs), with their high efficiency and brightness, are entering the display industry. However, a significant gap remains between the expectation of highly efficient light sources and their experimental realization into tiny pixels for ultrahigh-density displays for augmented reality (AR). Her, we report using tailored ion implantation (TIIP) to fabricate highly-efficient, electrically-driven pixelated InGaN microLEDs (μLEDs) at the mid-submicron scale (line/space of 0.5/0.5 μm. Moreover, we demonstrate high-density TFT and QD C/F integration technologies.
Conference Presentation
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jun Hee Choi, Jinjoo Park, Kiho Kong, Joo Hun Han, Jung Hun Park, Nakhyun Kim, Eunsung Lee, Joosung Kim, Dong Chul Shin, Younghwan Park, and Jaikwang Shin "Ion implantation as a new strategy for micro-LED pixelation", Proc. SPIE 12022, Light-Emitting Devices, Materials, and Applications XXVI, 1202202 (3 March 2022); https://doi.org/10.1117/12.2612248
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KEYWORDS
Light emitting diodes

Ion implantation

RGB color model

Augmented reality

Optical lithography

Electroluminescence

Glasses

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