Nanoscale phase change memory arrays patterned by block copolymer directed self-assembly

Maryann C. Tung; Asir Intisar Khan; Heungdong Kwon; Mehdi Asheghi; Kenneth E. Goodson; Eric Pop; H.-S. Philip Wong

doi:10.1117/12.2611737

25 May 2022 Nanoscale phase change memory arrays patterned by block copolymer directed self-assembly

Maryann C. Tung, Asir Intisar Khan, Heungdong Kwon, Mehdi Asheghi, Kenneth E. Goodson, Eric Pop, H.-S. Philip Wong

Proceedings Volume 12054, Novel Patterning Technologies 2022; 1205406 (2022) https://doi.org/10.1117/12.2611737
Event: SPIE Advanced Lithography + Patterning, 2022, San Jose, California, United States

Abstract

Scaling the cell size of phase change memory (PCM) is crucial for reducing reset current and enabling energy-efficient switching. Because memory arrays have a regular pattern, block copolymer directed self-assembly (DSA) is uniquely suited for reducing patterning costs for future nanoscale PCM. Here, we realize the fabrication and electrical characterization of a PCM array with Ge₂Sb₂Te₅ phase change material featuring 20-nm cells patterned by DSA. Our confined cell PCM devices with ~20 nm bottom contact diameter switch at ~150-200 μA, while maintaining a resistance on/off ratio of ~10. We also discuss some factors for further consideration for improving the limited endurance of such nanoscale confined cell PCM. Our demonstration would inspire further reduction of the PCM cell size below 10 nm using high-χ block copolymers, thus paving the pathway towards ultrahigh density memory.

Conference Presentation

Citation Download Citation

Maryann C. Tung, Asir Intisar Khan, Heungdong Kwon, Mehdi Asheghi, Kenneth E. Goodson, Eric Pop, and H.-S. Philip Wong "Nanoscale phase change memory arrays patterned by block copolymer directed self-assembly", Proc. SPIE 12054, Novel Patterning Technologies 2022, 1205406 (25 May 2022); https://doi.org/10.1117/12.2611737

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