Suppressing stochastic interaction to improve EUV lithography

Zhimin Zhu Sr.; Joyce Lowes; Shawn Ye; Zhiqiang Fan; Tim Limmer

doi:10.1117/12.2614289

25 May 2022 Suppressing stochastic interaction to improve EUV lithography

Zhimin Zhu Sr., Joyce Lowes, Shawn Ye, Zhiqiang Fan, Tim Limmer

Proceedings Volume 12055, Advances in Patterning Materials and Processes XXXIX; 120550P (2022) https://doi.org/10.1117/12.2614289
Event: SPIE Advanced Lithography + Patterning, 2022, San Jose, California, United States

Abstract

Stochasticity is a major contributor to the resolution limit of fine mechanics and optical imaging, which is also an obstacle for achieving cutting edge EUV lithography performance. The root cause of stochasticity comes from the pattern edge random variation within the resist after exposure due to low contrast. High substrate adhesion is also very fatal as it further aggravates the variation at the substrate due to increased interaction, leading to stochastic failures. In this paper, Stochastic Area Thickness (SAT) and Dynamic Stochastic Area Thickness (DSAT) are used to evaluate the stochastic interactions. High optical foot exposure is proposed instead of conventional low substrate reflectivity to reduce SAT. Adhesion control by acid/quencher loading is proposed to minimize the stochastic interaction between resist and substrate.

Citation Download Citation

Zhimin Zhu Sr., Joyce Lowes, Shawn Ye, Zhiqiang Fan, and Tim Limmer "Suppressing stochastic interaction to improve EUV lithography", Proc. SPIE 12055, Advances in Patterning Materials and Processes XXXIX, 120550P (25 May 2022); https://doi.org/10.1117/12.2614289

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