High-performance surface-illuminated pin photodetector array for 200Gbps receiving system

Fan Xiao; Qin Han; Shuai Wang; Feng Xiao; Han Ye

doi:10.1117/12.2605789

1 November 2021 High-performance surface-illuminated pin photodetector array for 200Gbps receiving system

Fan Xiao, Qin Han, Shuai Wang, Feng Xiao, Han Ye

Proceedings Volume 12057, Twelfth International Conference on Information Optics and Photonics; 1205729 (2021) https://doi.org/10.1117/12.2605789
Event: Twelfth International Conference on Information Optics and Photonics, 2021, Xi'an, China

Abstract

A parallel array with 8 high speed surface-illuminated pin photodetectors (PDs) is designed and fabricated. The effect of absorption layer thickness on PD responsivity and bandwidth is analyzed, and the material structure is optimized accordingly. The photodetector array, which is based on the Indium Phosphorus (InP) Platform, is manufactured by Metalorganic Chemical Vapor Deposition (MOCVD) and contact photolithography. Each detector has a photosensitive surface diameter of 20μm and a depletion layer thickness of 1.0μm. All 8 pin-PDs exhibit a uniform responsivity over 0.7A/W at 1310nm and a low dark current of below 4nA at 1V reverse bias. In addition, the 8 pin-PDs exhibit a uniform -3dB bandwidth of 20GHz. The experimental results agree well with the theoretical values. The photodetector array, which has a cost-effective and simple manufacturing process, could potentially operate at a total transmission rate beyond 200Gbps for fiber optic communication applications and can be integrated with other optoelectronic devices.

Citation Download Citation

Fan Xiao, Qin Han, Shuai Wang, Feng Xiao, and Han Ye "High-performance surface-illuminated pin photodetector array for 200Gbps receiving system", Proc. SPIE 12057, Twelfth International Conference on Information Optics and Photonics, 1205729 (1 November 2021); https://doi.org/10.1117/12.2605789

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