Paper
27 March 2022 Modeling of thermal stresses in passivation layers of InSb infrared detector
Dongying Wu, Wei Liu, Wen Wang, Yanqiu Lyu
Author Affiliations +
Proceedings Volume 12169, Eighth Symposium on Novel Photoelectronic Detection Technology and Applications; 121690H (2022) https://doi.org/10.1117/12.2619717
Event: Eighth Symposium on Novel Photoelectronic Detection Technology and Applications, 2021, Kunming, China
Abstract
Due to a big difference between the temperature of the passivation film preparation and the temperature when the device is used, the stress will appear in the layers, and the existence of stress will affect the spectral performance of the InSb infrared detector. SiO2 or SiNx passivation film for the InSb device is prepared at 130°C and is used at 77K, which the stress is seriously affect the device performance due to the mismatch. We simulate the stress between different thickness of SiO2 and SiNx single-layer, SiO2/SiNx double-layer and SiO2/SiNx/SiO2/SiNx multilayer passivation films on the InSb substrate. The bending strain of the SiO2/SiNx double-layer passivation films is the smallest. Combined the formula of infrared transmittance, we get less strain when the single-layer SiO2 thickness is 0.78 μm or the single-layer SiNx thickness is 0.54 μm. When the thicknesses of SiO2 and SiNx are 0.1 μm and 0.42μm respectively for the double-layer passivation film system, the external transmittance is the largest and the strain is smallest.
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dongying Wu, Wei Liu, Wen Wang, and Yanqiu Lyu "Modeling of thermal stresses in passivation layers of InSb infrared detector", Proc. SPIE 12169, Eighth Symposium on Novel Photoelectronic Detection Technology and Applications, 121690H (27 March 2022); https://doi.org/10.1117/12.2619717
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KEYWORDS
Multilayers

Infrared detectors

Thermal modeling

Infrared radiation

Transmittance

Coating

Instrument modeling

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