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Terahertz wave, as a special electromagnetic wave which lie in the frequency gap between infrared and microwave, have attracted more and more attentions in recent years because of its great practical applications in the field of terahertz imaging, wireless communication and detection. In this paper, a broadband and angle independent active dynamically tunable absorber is numerically demonstrated using the VO2 phase-change material in terahertz regime. As the conductivity of VO2 varies from 2×105S/m to 20S/m, the absorption efficiency of our device in the frequency range of 2.73 - 9.95 THz has dramatically decreased from averaged 94.5% to almost 0%, and the modulation depth is nearly as high as 100%. Moreover, the proposed structure exhibit an angle and polarization independent in the range of 3.4 – 8.4THz. The stacked disk structure can be fabricated with a simple e-beam lithographic and etching process. Comparaed with the proposed metamaterials wideband tunbale absorbers, our designed structure has more advantages in practical applications, such as sensing, modulating and imaging technology
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