|
Silver nanowires combine excellent conductivity, low surface resistance, high transparency, and good ductility, and have been widely studied and applied to fabrication of many micro-/nanoscale optoelectronic devices, such as transparent conductive films, microelectronic devices, thin-film solar cells, microelectrodes, and biosensors. To obtain the damage and photoelectric characteristics of micro-/nanoscale optoelectronic devices under laser irradiation, and thus to improve their laser-irradiation tolerance and expand applications in strong light-irradiation environments, in this paper, through experiments and theoretical calculations, we studied the laser-induced damage thresholds and damage-induced changes in the photoelectric characteristics of silver nanowires of different diameters exposed to single-pulse laser irradiation at wavelengths of 355, 532, and 1064 nm. Results show that the larger the diameter of silver nanowires, the higher the laser-induced damage threshold. Silver nanowires have the lowest damage threshold when irradiated by a 355-nm laser. The damage thresholds of silver nanowires with diameters of 20 and 40 nm are 0.22 and 1.35 J/cm2 , respectively. We have found that when the laser energies are higher than the damage thresholds, melting and fracturing occur at the wire ends and at the strong electric field distribution "node" sites of the silver nanowires, and the sample’s optical absorption rate and sheet resistance also increase. Such degradation of photoelectric performance can affect the absorptivity and conductivity of micro-/nanoscale optoelectronic devices, resulting in the degradation of device performance. The study provides new information for the development and application of micro-/nanoscale optoelectronic devices under strong laser-irradiation conditions.
|
