Monolithically stacked quantum well lasers

Robert G. Waters; Y. C. Chen; Richard J. Dalby

doi:10.1117/12.18241

1 May 1990 Monolithically stacked quantum well lasers

Robert G. Waters, Y. C. Chen, Richard J. Dalby

Proceedings Volume 1219, Laser Diode Technology and Applications II; (1990) https://doi.org/10.1117/12.18241
Event: OE/LASE '90, 1990, Los Angeles, CA, United States

Abstract

Monolithic stacking of up to three quantum well lasers has been demonstrated. CW threshold current densities per well and differential quantum efficiencies are comparable to those for individual devices, and transverse far-field patterns indicate phase-locking. Catastrophic optical damage levels increase with increasing quantum-well count and are substantially higher than those achieved with a single quantum-well laser when GaAs wells are involved.

Citation Download Citation

Robert G. Waters, Y. C. Chen, and Richard J. Dalby "Monolithically stacked quantum well lasers", Proc. SPIE 1219, Laser Diode Technology and Applications II, (1 May 1990); https://doi.org/10.1117/12.18241

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