Research on realizing low energy consumption using domino circuit

Weihang Cai

doi:10.1117/12.2635225

25 April 2022 Research on realizing low energy consumption using domino circuit

Weihang Cai

Proceedings Volume 12244, 2nd International Conference on Mechanical, Electronics, and Electrical and Automation Control (METMS 2022); 1224431 (2022) https://doi.org/10.1117/12.2635225
Event: 2nd International Conference on Mechanical, Electronics, and Electrical and Automation Control (METMS 2022), 2022, Guilin, China

Abstract

Because of the wide application of domino circuits in processors and memory, circuit workers have invested a lot of time and energy in domino circuit design. Firstly, the design idea of the domino circuit is summarized based on previous research, including the structure, the working process, the possibility of low consumption, and the anti-interface of a domino gate. Then this paper focus on how to achieve low power consumption in three ways. With the continuous progress of semiconductor manufacturing technology and the continuous reduction of tube size, high performance means the leakage current is increased. But too much leakage current reduces the anti-interference capability of the circuit. This paper summarizes several ways to get high performance with low consumption domino circuit design. After that, this paper discussed the cause of process parameter fluctuation and its effect on the sub-threshold leakage current were studied. But the effect of gate leakage current was not considered, so the parameter of a domino gate and the research direction in the future. Finally, the research discusses some challenges and problems.

Citation Download Citation

Weihang Cai "Research on realizing low energy consumption using domino circuit", Proc. SPIE 12244, 2nd International Conference on Mechanical, Electronics, and Electrical and Automation Control (METMS 2022), 1224431 (25 April 2022); https://doi.org/10.1117/12.2635225

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KEYWORDS

Transistors

Integrated circuits

Logic

Clocks

Power supplies

Reliability

Fin field effect transistors

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