Potential of hydrogenated microcrystalline silicon-germanium for low thermal budget near infrared sensors

Alestair Wilson; Erwann Fourmond; Bilel Saidi; Jean-Gabriel Mattei; Benjamin Fornacciari; Mickaël Gros-Jean

doi:10.1117/12.2647554

10 March 2023 Potential of hydrogenated microcrystalline silicon-germanium for low thermal budget near infrared sensors

Alestair Wilson, Erwann Fourmond, Bilel Saidi, Jean-Gabriel Mattei, Benjamin Fornacciari, Mickaël Gros-Jean

Proceedings Volume 12415, Physics and Simulation of Optoelectronic Devices XXXI; 1241507 (2023) https://doi.org/10.1117/12.2647554
Event: SPIE OPTO, 2023, San Francisco, California, United States

Abstract

Microcrystalline Silicon-Germanium (μc-SiGe:H) is a low bandgap material whose optical and electrical properties strongly depend on deposition conditions. In this work, an above integrated circuit (above-IC) [1]–[3] compatible, near infrared (NIR) sensor based on microcrystalline Silicon-Germanium is produced and characterized. The N-I-P photodiode is obtained by radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) from a SiH₄ + GeH₄ + H₂ gas mixture. Quantum efficiency measurements reveals a 60 at.% Ge fraction is optimal for a 200 nm thick μc-SiGe:H intrinsic absorber layer. Above this threshold, the degradation in electrical properties prevails on the gain in absorption.

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Citation Download Citation

Alestair Wilson, Erwann Fourmond, Bilel Saidi, Jean-Gabriel Mattei, Benjamin Fornacciari, and Mickaël Gros-Jean "Potential of hydrogenated microcrystalline silicon-germanium for low thermal budget near infrared sensors", Proc. SPIE 12415, Physics and Simulation of Optoelectronic Devices XXXI, 1241507 (10 March 2023); https://doi.org/10.1117/12.2647554

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