High repeatability and low shrinkage solution using CD-SEM for EUV resist

Masaki Sugie; Toshimasa Kameda; Shunsuke Mizutani

doi:10.1117/12.2657680

27 April 2023 High repeatability and low shrinkage solution using CD-SEM for EUV resist

Masaki Sugie, Toshimasa Kameda, Shunsuke Mizutani

Proceedings Volume 12496, Metrology, Inspection, and Process Control XXXVII; 1249615 (2023) https://doi.org/10.1117/12.2657680
Event: SPIE Advanced Lithography + Patterning, 2023, San Jose, California, United States

Abstract

EUV resist is prone to damage (shrinkage) caused by electron irradiation during dimensional measurement using electron beam tool, such as CD-SEM. High repeatability and low shrinkage is demanded for metrology. In this study, we propose solutions that can reduce shrinkage and maintain performance of repeatability. We evaluated shrinkage of EUV resist using 100V low energy electron beam. Comparing to 300V electron beam, 100V beam enabled to shrinkage. Meanwhile, repeatability improvement was achieved by multiple proprietary solutions.

Conference Presentation

Citation Download Citation

Masaki Sugie, Toshimasa Kameda, and Shunsuke Mizutani "High repeatability and low shrinkage solution using CD-SEM for EUV resist", Proc. SPIE 12496, Metrology, Inspection, and Process Control XXXVII, 1249615 (27 April 2023); https://doi.org/10.1117/12.2657680

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