Poster + Paper
27 April 2023 Large field of view metrology: detecting critical edge placement error signatures not seen with small field of view in an HVM environment
Author Affiliations +
Conference Poster
Abstract
For advanced nodes, a robust metrology is required to estimate EPE and its contributors. Especially when moving to late process development steps (Ramp-Up and High Volume Manufacturing (HVM)) where inter and intra wafer variations are small but crucial. In this study, we used 8um by 8um SEM images to assess the benefit of large Field-of-View (LFOV) metrology. The result proves the capability of LFOV metrology in capturing not only intra-wafer EPE behavior and its sensitivity to minor variations but also the minor wafer-to-wafer (W2W) variations which is not possible using a small FOV (SFOV) metrology (0.5um by 0.5um) due to larger noise level.
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mohamed Ridane, Ivy Chen, Jaden Song, Peter Nikolsky, Kuan-Ming Chen, Shinyeong Lee, Sean Park, Kolos Lin, Yu-Chi Su, Kyoyeon Cho, Ethan Yu, James Park, Abdalmohsen Elmalk, Chih-Hung Hsieh, Alexander Serebryakov, Lei Zhang, Taekwon Jee, Joonsang You, Hong-Goo Lee, Jongmin Park, Jungchan Kim, Sang-Woo Kim, Seungmo Hong, and Jaewook Seo "Large field of view metrology: detecting critical edge placement error signatures not seen with small field of view in an HVM environment", Proc. SPIE 12496, Metrology, Inspection, and Process Control XXXVII, 124963C (27 April 2023); https://doi.org/10.1117/12.2659692
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KEYWORDS
Metrology

Semiconducting wafers

High volume manufacturing

Line width roughness

Critical dimension metrology

Edge detection

Environmental sensing

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