Atomic layer deposition derived organic-inorganic hybrid EUV photoresists

Ashwanth Subramanian; Dan N. Le; Su Min Hwang; Nikhil Tiwale; Won-Il Lee; Kim Kisslinger; Ming Lu; Aaron Stein; Jiyoung Kim; Chang-Yong Nam

doi:10.1117/12.2658685

30 April 2023 Atomic layer deposition derived organic-inorganic hybrid EUV photoresists

Ashwanth Subramanian, Dan N. Le, Su Min Hwang, Nikhil Tiwale, Won-Il Lee, Kim Kisslinger, Ming Lu, Aaron Stein, Jiyoung Kim, Chang-Yong Nam

Author Affiliations +

Proceedings Volume 12498, Advances in Patterning Materials and Processes XL; 1249810 (2023) https://doi.org/10.1117/12.2658685
Event: SPIE Advanced Lithography + Patterning, 2023, San Jose, California, United States

Abstract

High-NA EUV lithography required for continued extreme downscaling of Si devices demands ultrathin photoresists with high EUV patterning performance and etch resistance. This talk briefs our current efforts on synthesizing new organic-inorganic hybrid resists based on atomic layer deposition (ALD) techniques and characterizing their electron beam and EUV patterning characteristics. Two distinctive approaches are discussed–vapor-phase infiltration (VPI) and molecular ALD (MALD), where the former utilizes an infiltration of gaseous inorganic precursors into existing organic resists and the latter a cyclic layering of organic and inorganic moieties. Featured systems include an indium-oxide-infiltrated PMMA and a MALD hybrid resist comprising trimethylaluminum (TMA) and hydroquinone (HQ). Given the facile implementablility and control of resist composition and characteristics, the ALD-based hybrid resist synthesis has a potential for enabling high-performance EUV photoresist systems.

Conference Presentation

Citation Download Citation

Ashwanth Subramanian, Dan N. Le, Su Min Hwang, Nikhil Tiwale, Won-Il Lee, Kim Kisslinger, Ming Lu, Aaron Stein, Jiyoung Kim, and Chang-Yong Nam "Atomic layer deposition derived organic-inorganic hybrid EUV photoresists", Proc. SPIE 12498, Advances in Patterning Materials and Processes XL, 1249810 (30 April 2023); https://doi.org/10.1117/12.2658685

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