Impact of surface bump defects in 4H-SiC epi-layer material on the performance of avalanche photodiodes

Xingye Zhou; Yuanjie Lv; Hongyu Guo; Guodong Gu; Yuangang Wang; Shixiong Liang; Aimin Bu; Zhihong Feng

doi:10.1117/12.2666714

4 April 2023 Impact of surface bump defects in 4H-SiC epi-layer material on the performance of avalanche photodiodes

Xingye Zhou, Yuanjie Lv, Hongyu Guo, Guodong Gu, Yuangang Wang, Shixiong Liang, Aimin Bu, Zhihong Feng

Proceedings Volume 12617, Ninth Symposium on Novel Photoelectronic Detection Technology and Applications; 126176J (2023) https://doi.org/10.1117/12.2666714
Event: 9th Symposium on Novel Photoelectronic Detection Technology and Applications (NDTA 2022), 2022, Hefei, China

Abstract

Material defects are one of the keys limiting factors for semiconductor device performances and reliability. In this work, the impact of surface bump defects in 4H-SiC epi-material on the performance of Avalanche Photodiodes (APDs) are investigated for ultraviolet (UV) detection. Based on the 4H-SiC epi-material with a concentration of ~104 cm-2 for surface bump defects, 4H-SiC APDs were fabricated and characterized. The results demonstrate that surface bump defects have no effect with the leakage current of devices at low reverse voltage. However, premature breakdown or even device failure will be caused due to the surface bump defects. It is proved that surface bump defects can be ignored for low-voltage photodiodes but must be taken into account for APDs. The physical mechanism and suppression of surface bump defects in 4H-SiC epi-material are further analyzed. Optimization of C/Si ratio for source gas during the growth process of epilayer will help to suppress the formation of surface bump defects. This work will be useful for researchers in the related fields of 4H-SiC photodiode UV detectors.

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Xingye Zhou, Yuanjie Lv, Hongyu Guo, Guodong Gu, Yuangang Wang, Shixiong Liang, Aimin Bu, and Zhihong Feng "Impact of surface bump defects in 4H-SiC epi-layer material on the performance of avalanche photodiodes", Proc. SPIE 12617, Ninth Symposium on Novel Photoelectronic Detection Technology and Applications, 126176J (4 April 2023); https://doi.org/10.1117/12.2666714

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