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The accelerated advancements in nanophotonic technologies have amplified the requirements for optoelectronic devices. These now encompass the need for compact design, rapid operation, enhanced efficiency, and reduced power consumption. Meeting these evolving demands necessitates the development of innovative material frameworks aligned with emerging technological standards. In this context, we unveil our latest research findings, accentuating the exploitation of low-dimensional materials to pioneer advancements in photodetector and electro-optic modulator functionalities. Drawing from the emergent field of ’strainoptronics’ our work elucidates its capability to modulate a variety of material properties: bandgap, work function, and mobility. Moreover, harnessing the principles of the scaling-length theory, we chart our progression and empirical outcomes related to high gain-bandwidth product photodetectors. This encompasses the amalgamation of a metal slot with a silicon photonic waveguide aimed at refining the carrier-lifetime-to-transit time ratio. Additionally, our 2D material PN junction photodetector, operable at zero bias, emerges as a vanguard in curtailing dark currents, resulting in remarkably efficient noise-equivalent power outputs. Furthermore, recognizing the surging interest in wearable technology, our research also delves into the integration of these advancements into flexible substrates. We also elucidate the symbiotic relationship between our innovations and Photonic Integrated Circuits (PICs), highlighting the potential for our developments to serve as foundational building blocks for the next generation of compact, efficient, and integrative PICs. Our research presents a confluence of innovative approaches and material amalgamations, poised to redefine optoelectronic device performance in tandem with contemporary nanophotonic paradigms and the dynamic landscape of wearable technology and integrated photonic circuits.
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