The effective use of AZ1350J as an electron beam resist

Bruce C. Prothro

doi:10.1117/12.3011921

21 December 2023 The effective use of AZ1350J as an electron beam resist

Bruce C. Prothro

Proceedings Volume 12810, Bay Area Chrome Users Society Symposium 1986; 128100A (2023) https://doi.org/10.1117/12.3011921
Event: 6th Annual BACUS Symposium, 1986, Santa Clara, CA, United States

Abstract

The objective of this paper is to present an analysis of the use of A21350J as an electron beam resist and the advantages this process technology offers the mask maker in the fabrication of chrome photomasks. The immediate advantage of using A71350J is that it makes use of current processing technologies. The processing of diazo-type resists can be done in two simple, steps: develop and etch. This is a predictable process with repeatable results that does not require any develop cycle endpoint determination. The elimination of the endpoint determination has further advantages in that it eliminates any source of process induced defects as a results of excess handling. The use of AZ resists with an electron beam exposure system results in improved edge quality that can be reproduced in all feature sizes including submicron linewidths. The AZ resist process is compatible with plasma etching. Additional advantages of an AZ process are the uniform critical dimensions, low chrome defect densities, low pinhole densities, and the reproducibility of results. Submicron linewidths can also he resolved with excellent uniformity and repeatability. The low defect densities result in the minimization of the time required for inspection and repair. Further advantages of an AZ process that will be discussed include its wide application, the need for less capital investment than other processes, and its compatibility with FPA standards without requiring any special handling.

Citation Download Citation

Bruce C. Prothro "The effective use of AZ1350J as an electron beam resist", Proc. SPIE 12810, Bay Area Chrome Users Society Symposium 1986, 128100A (21 December 2023); https://doi.org/10.1117/12.3011921

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KEYWORDS

Electron beams

Photomasks

Photoresist processing

Semiconducting wafers

X-rays

Bismuth

Ions

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