GMC: a negative acting resist used in the fabrication of chromium photomasks

A. E. Novembre; L. M. Kowalski; J. Frackoviak; D. A. Mixon; L. F. Thompson

doi:10.1117/12.3011932

28 December 2023 GMC: a negative acting resist used in the fabrication of chromium photomasks

A. E. Novembre, L. M. Kowalski, J. Frackoviak, D. A. Mixon, L. F. Thompson

Proceedings Volume 12811, Bay Area Chrome Users Society Symposium 1987; 1281108 (2023) https://doi.org/10.1117/12.3011932
Event: 7th Annual BACUS Symposium, 1987, Sunnyvale, CA, United States

Abstract

GMC is a random amorphous co-polymer of glycidyl methacrylate and 3- chlorostyrene. The material functions as a negative acting (cross-linking type) electron beam resist. Its sensitivity, defined as the dose necessary to gel 50% of the initial film thickness (D_q^0.5), is 1.5 and 3.1 uC/cm² @ 10 and 20 kV, respectively. No post exposure curing is required for device codes that allow line-width tolerances of > +/- 0.10 um. A methodology has been developed for determining a thermodynamically marginal developer (solvent) which minimizes swelling of the defined features, and improves process control associated with the spray/spin development step. The use of this method has led to an improvement in resolution over that obtained with conventional 2-component developers. Vertical 0.75 um line and space patterns are routinely delineated, and features in the 0.5 um range can be obtained. The material exhibits enhanced dry etching resistance when compared to methacrylate based (OOP, PGMA) negative resists, and is compatible with both wet and dry etching methods utilized in the patterning of the chromium layer. Production scale quantities are not routinely produced. A batch to batch comparison of the critical molecular and lithographic properties indicates deviations of < 5 percent. Statistical data derived from product related IX photomasks reveals an average calculated line width uniformity (3 sigma) and line edge roughness (6 sigma) of 0.027 um and 0.064 um, respectively. This represents 100% improvement in feature size quality, and control over COP, and is equivalent to that observed with PBS patterned masks. Pinhole defects are virtually nonexistent, and defect densities under 0.2/cm² are observed.

Citation Download Citation

A. E. Novembre, L. M. Kowalski, J. Frackoviak, D. A. Mixon, and L. F. Thompson "GMC: a negative acting resist used in the fabrication of chromium photomasks", Proc. SPIE 12811, Bay Area Chrome Users Society Symposium 1987, 1281108 (28 December 2023); https://doi.org/10.1117/12.3011932

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KEYWORDS

Photomasks

Etching

Film thickness

Line edge roughness

Chromium

Dry etching

Fabrication

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