Intervalley scattering times from the rigid-pseudoion method

Stefan Zollner; Sudha Gopalan; Manuel Cardona

doi:10.1117/12.20709

1 August 1990 Intervalley scattering times from the rigid-pseudoion method

Stefan Zollner, Sudha Gopalan, Manuel Cardona

Proceedings Volume 1282, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors III; (1990) https://doi.org/10.1117/12.20709
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States

Abstract

We have used the rigid-pseudoion method (with q-dependent matrix elements and a realistic non-parabolic band structure) to calculate the lifetimes of electrons at the L- and X-points in GaAs as a function of temperature (L: 2.2±0.5 p5, X: 130±20 fs at room temperature). The contribution of the TA phonons to LF-scattering explains the discrepancy between the experiments of Shah and Kash, performed at two different temperatures. About 80% of the carriers at X scatter into the L-valleys. The intervalley scattering times in the F-valley for electrons with an energy of 165 meV above the L-point are found to be 750±100 fs at helium temperatures (100 fs for electrons with an energy of 270 meV). These results compare favorably with recent femtosecond and CW laser experiments.

Citation Download Citation

Stefan Zollner, Sudha Gopalan, and Manuel Cardona "Intervalley scattering times from the rigid-pseudoion method", Proc. SPIE 1282, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors III, (1 August 1990); https://doi.org/10.1117/12.20709

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