Effects of growth direction on SiGe/Si heteroepitaxy

T. S. Kuan; S. S. Iyer

doi:10.1117/12.20793

1 October 1990 Effects of growth direction on SiGe/Si heteroepitaxy

T. S. Kuan, S. S. Iyer

Proceedings Volume 1284, Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors; (1990) https://doi.org/10.1117/12.20793
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States

Abstract

In this work we study the growth of SiGe/Si superlattices and thick SiGe layers on ( 1 00), ( 1 1 1 ),and ( 1 1 0) Si surfaces at various temperatures by molecular-beam epitaxy (MBE) . We find that these three growth directions give rise to different growth morphologies and defect structures. The best growth is achieved on (100) surfaces, since growth on ( 1 1 1 ) and ( 1 1 0) surfaces are much more susceptible to twin formation. The growth direction, together with growth temperature, also dictates the onset of long-range ordering in SiGe layers. Our results indicate that ordering occurs only in thick, partially-relaxed SiGe layers grown on (100) surfaces at low temperatures but not in strained-layer superlattices grown under identical conditions. Thick SiGe layers or strained-layer superlattices grown on (1 1 1) or (1 10) surfaces at high or low temperatures do not exhibit ordering.

Citation Download Citation

T. S. Kuan and S. S. Iyer "Effects of growth direction on SiGe/Si heteroepitaxy", Proc. SPIE 1284, Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors, (1 October 1990); https://doi.org/10.1117/12.20793

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