Planar-doped structures by atomic layer epitaxy

Majid Hashemi; J. Ramdani; Brian McDermott; Kimberly G. Reid; John R. Hauser; Salah M. Bedair

doi:10.1117/12.20918

1 August 1990 Planar-doped structures by atomic layer epitaxy

Majid Hashemi, J. Ramdani, Brian McDermott, Kimberly G. Reid, John R. Hauser, Salah M. Bedair

Proceedings Volume 1288, High-Speed Electronics and Device Scaling; (1990) https://doi.org/10.1117/12.20918
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States

Abstract

Atomic layer epitaxy (ALE) has been used for the low temperature deposition of planar-doped structures using organometallic sources, AsH3 and H2Se. Carrier concentrations in the 1019/cm3 range have been achieved, with a sharp concentration profile comparable to that reported for equivalent structures by molecular beam epitaxy (MBE). A set of planar-doped Se sheets, separated by 50 A of undoped GaAs, was used for nonalloyed contacting layers to n-GaAs films with contact resistivity in the low 10-6?cm2 range. The sidewall regrowth capability of ALE was also used in reducing the parasitic source and drain resistances by about 30%. Finally, a planar doped field effect transistor (FET) were fabricated. The performance of these ALE devices were comparable to FET devices fabricated by other growth techniques.

Citation Download Citation

Majid Hashemi, J. Ramdani, Brian McDermott, Kimberly G. Reid, John R. Hauser, and Salah M. Bedair "Planar-doped structures by atomic layer epitaxy", Proc. SPIE 1288, High-Speed Electronics and Device Scaling, (1 August 1990); https://doi.org/10.1117/12.20918

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