Presentation + Paper
8 March 2024 InGaN-based Micro-LEDs: enhancing efficiency and speed for next-generation visible light communication applications
Author Affiliations +
Abstract
Visible light communication (VLC), which utilizes LEDs, promises superior privacy and security and reduced impact on surrounding electronics compared to traditional Wi-Fi. This paper explores the potential of InGaN-based micro-light-emitting diodes (micro-LEDs) in high-speed VLC applications, focusing on yellow-green micro-LEDs with nanoporous distributed Bragg reflector (NP-DBR) and red InGaN micro-LEDs. Yellow-green micro-LEDs achieved a maximum external quantum efficiency (EQE) of 8.7%, bandwidth of 442 MHz, and data rate of 800 Mbit/s, while red micro-LEDs demonstrated an EQE of 5.95%, maximum bandwidth of 424 MHz, and data rate of 800 Mbit/s. The application of four core technologies, including circular devices and electrodes, reduced contact electrode area, atomic layer deposition (ALD) for passivation protection, and multi-chip parallel arrays, enhanced optoelectronic characteristics. This paper also highlights the superior performance of InGaN-based red micro-LEDs with a single quantum well (SQW) structure over double quantum wells (DQWs) for VLC applications. The SQW structure yielded higher maximum EQE, modulation bandwidth, and faster transmission rates, paving the way for the potential of full-color micro-display and high-speed VLC applications.
Conference Presentation
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Wei-Ta Huang, Tzu-Yi Lee, Fu-He Hsiao, Wen-Chien Miao, Daisuke Iida, Kuo-Bin Hong, Chien-Chung Lin, Fang-Chung Chen, Shu-Wei Chang, Ray-Hua Horng, Yu-Heng Hong, Yao-Wei Huang, Kazuhiro Ohkawa, and Hao-Chung Kuo "InGaN-based Micro-LEDs: enhancing efficiency and speed for next-generation visible light communication applications", Proc. SPIE 12886, Gallium Nitride Materials and Devices XIX, 1288606 (8 March 2024); https://doi.org/10.1117/12.3000782
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KEYWORDS
Visible light communication

Light emitting diodes

Quantum wells

External quantum efficiency

Indium gallium nitride

Atomic layer deposition

Quantum efficiency

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