High-accuracy wafer topography sensor using optical spectroscopy and correction based on an optical model

Ryohei Niwata; Tadashi Nagayama; Kota Dobashi; Kensuke Yoshinaga; Satoshi Takahashi

doi:10.1117/12.3009791

9 April 2024 High-accuracy wafer topography sensor using optical spectroscopy and correction based on an optical model

Ryohei Niwata, Tadashi Nagayama, Kota Dobashi, Kensuke Yoshinaga, Satoshi Takahashi

Proceedings Volume 12955, Metrology, Inspection, and Process Control XXXVIII; 1295525 (2024) https://doi.org/10.1117/12.3009791
Event: SPIE Advanced Lithography + Patterning, 2024, San Jose, California, United States

Conference Poster

Abstract

Nikon has developed a state-of-the-art wafer topography sensor dubbed S-meter-Z, which is based on an optical spectroscopy and novel correction function based on an optical model. The measurement repeatability is roughly 10 nm and has the potential to reach down to a few nm with additional improvements. Processed wafers with lithography patterns often have a complicated surface film structure, which induces the amplitude change and phase shift of the reflected light. This phase shift often causes errors in wafer topography measurement. The S-meter-Z minimizes these errors and provides accurate wafer geometry data for wafer process monitoring, which is essential for manufacturing today’s leading-edge microchip devices.

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Ryohei Niwata, Tadashi Nagayama, Kota Dobashi, Kensuke Yoshinaga, and Satoshi Takahashi "High-accuracy wafer topography sensor using optical spectroscopy and correction based on an optical model", Proc. SPIE 12955, Metrology, Inspection, and Process Control XXXVIII, 1295525 (9 April 2024); https://doi.org/10.1117/12.3009791

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