Green chemistry for SiN etch

Nathan Stafford; Colin Jennings; Scott Biltek; Phong Nguyen; Yichen Yao

doi:10.1117/12.3021929

9 April 2024 Green chemistry for SiN etch

Nathan Stafford, Colin Jennings, Scott Biltek, Phong Nguyen, Yichen Yao

Proceedings Volume 12958, Advanced Etch Technology and Process Integration for Nanopatterning XIII; 129580N (2024) https://doi.org/10.1117/12.3021929
Event: SPIE Advanced Lithography + Patterning, 2024, San Jose, California, United States

Abstract

Over the past few years, numerous countries and semiconductor manufacturing entities have unveiled their commitments to achieving net-zero carbon emissions by 2050 or even sooner. When it comes to manufacturing chips, plasma etch processes contribute significantly to emissions, especially in dielectric etching. These processes typically involve the use of high global warming potential (GWP) fluorocarbon gasses like CHF₃, CF₄, and CH₂F₂. Air Liquide's research and development (R&D) endeavors have led to the creation of multiple alternative etch chemistries for SiN and SiO₂ etching applications that boast remarkably low GWPs. Despite strides in developing these alternative chemistries, accurately forecasting the gases emitted post-plasma remains elusive. The complexities inherent in the breakdown and recombination processes within the plasma make it challenging to predict the specific emissions, regardless of whether the gas introduced into the plasma etch chamber carries a high or low GWP. This research showcases the utilization of Fourier Transform Infrared Spectroscopy (FTIR) to analyze and measure the emission gas stream from the plasma etch chamber. Moreover, the innovative chemistries developed by Air Liquide have exhibited enhanced etch performance while resulting in lower CO₂ equivalent emissions compared to the current baseline in dielectric etching.

Conference Presentation

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Nathan Stafford, Colin Jennings, Scott Biltek, Phong Nguyen, and Yichen Yao "Green chemistry for SiN etch", Proc. SPIE 12958, Advanced Etch Technology and Process Integration for Nanopatterning XIII, 129580N (9 April 2024); https://doi.org/10.1117/12.3021929

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available