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During researching on GaN-based quantum well diodes, an intensive and continuous current oscillation phenomenon was discovered. To describe the discovered phenomenon and release its mechanism and foreseeable applications, an In0.21GaN/GaN/In0.14GaN/Al0.1GaN/In0.07GaN stacked DBS structure was proposed and modeled by coupled 1D Schrodinger and Poisson equations. Then, method of ‘non-equilibrium Green function (NEGF)’ was adopted to carry out simulation experiments on the proposed samples with different structure parameters. Simulation results indicate that the discovered phenomenon occurs at bias voltages higher than about 3.15 V and accompanying main RT oscillations some time. Through studies and analyses, it was released the generation of the discovered phenomenon is mainly determined by band structure, distribution of Bound State Energy Levels (BSELs), electron distribution on BSELs, superstition of electron transportation through multi-sub-band BSELs and the impact of polarization field. The proposed RTDs with intensive and continuous current oscillation characteristic is very suitable for versatile applications such as Voltage Controlled High Frequency Small Signal Voltage-Current Converter (VCHFSSVCC), Voltage Controlled Impedance Matching (VCIM), Voltage Controlled RF Tuning (VCRFT), Voltage Controlled Electron Wave Filter (VCEWF), Multi-Valued Half-Voltage Domain and Full-Voltage Domain Pure Quantum Logic (MVPQL), Novel Neuron Logic (NNL) and some other circuits and systems.
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