Presentation + Paper
20 June 2024 Raman scattering and supercontinuum generation in high-index doped silica chip waveguides
Author Affiliations +
Abstract
We present a comprehensive investigation of Raman scattering (RS) and supercontinuum (SC) generation in high-index doped silica glass integrated optical waveguides under diverse femtosecond pumping wavelengths and input polarization states. We first report the observation based on a confocal Raman microscope of new Raman peaks different from fused silica at 48 THz and 75 THz, respectively. We then demonstrate broadband supercontinuum generation from 700 nm to 2500 nm when pumping into the anomalous dispersion regime at 1200 nm, 1300 nm, and 1550 nm, respectively. Conversely, narrower SC spectra were generated when pumping in the normal dispersion regime at 1000 nm of self-phase modulation and optical wave breakup. A good agreement is found with numerical simulations of a nonlinear Schrödinger equation including the new Raman response. We also study the impact of the TE/TM polarization modes of the integrated waveguide on SC generation.
Conference Presentation
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
C. Khallouf, V. T. Hoang, G. Fanjoux, B. Little, S. T. Chu, D. J. Moss, R. Morandotti, J. M. Dudley, B. Wetzel, and T. Sylvestre "Raman scattering and supercontinuum generation in high-index doped silica chip waveguides", Proc. SPIE 13004, Nonlinear Optics and its Applications 2024, 130040I (20 June 2024); https://doi.org/10.1117/12.3021965
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KEYWORDS
Waveguides

Silica

Polarization

Dispersion

Supercontinuum generation

Raman spectroscopy

Glasses

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